WTPB4A60SW WTPB4A60SW WTPB4A60SW WTPB4A60SW c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . bi-directional bi-directional bi-directional bi-directional t t t t rio rio rio rio de de de de thyrist thyrist thyrist thyrist o o o o r r r r features repetitive peak o f f-state voltage : 600v r.m.s on-state current ( it(rms)= 4 a ) low on-state voltage (1.6v(typ.) @ i tm ) high commutation dv/dt general descripti o n standard gate triggering triac is suitable for direct coupling to t t l, htl, cmos a n d applica ti o n s u c h a s va r i o u s l og i c f u nc ti o n s , l ow p o w er ac sw itch i ng app li c at i on s , s u c h a s fa n s p ee d , s ma l l l i g h t c on t r ol l e rs a n d h o me a pp li a n c e e qu i p me n t . absolute maximum ratings ( t j = 25 c unless otherwise specified ) s y mbol para m e ter c o n d i tion ratin g s uni t s v d r m / v r r m repetitive pe a k o f f-state v o l t a g e 600 v i t ( r m s ) r.m.s o n-s t ate c urre n t t j = 110 c 4.0 a i t s m surge on - s t ate cur r ent one cycle, peak value, non- repetitiv e full cycle 50hz 30 a 60hz 31 2 i t i 2 t 5.1 a 2 s p g m peak ga t e po w er d i ssi p ation 5 w p g ( a v ) a v e r age gate po w er dissi p a tion t j = 125 c 1 w i g m peak ga t e cur r ent t j = 125 c 4.0 a v g m peak ga t e v ol t age 7.0 v t j operating junction t empe r ature -40~+150 t s tg st o rage t empe r ature -40~+150 thermal characteristics symbol parameter v a lue units r jc thermal resistance junction to case(dc) 2.6 /w r j a thermal resistance junction to ambien t (dc) 60 /w jan 2009 . rev. 0 t02-1
WTPB4A60SW WTPB4A60SW WTPB4A60SW WTPB4A60SW 2 /5 symbol char a cteristics min typ. max unit i drm / i rrm off - state leakage current (v ak = v drm /v rrm sing l e phase, half w a ve ) tj=25 - - 5 a tj=125 - - 1 ma v tm for w a r d o n voltage (i t =5a, inst. measurement) - 1.2 1.6 v i gt gate trigger current ( continuous dc) (v ak = 6 vdc, rl = 10 ) note:1 t2+,g+ - - 10 ma t2+,g- - - 10 t2-,g- - - 10 v gt gate trigger voltage (continuous dc) ) (v ak = 6 vdc, rl = 10 ) note:1 t2+,g+ - - 1.5 v t2+,g- - - 1.5 t2-,g- - - 1.5 v gd gate threshold voltage =1/2v drm , rl = 3.3k t j =125 0.2 - - v dv/dt critical rate of rise of off - state v o ltage at commutation (v d =0.67v drm ; gate open) note:2 t j =125 40 - - v/ s i h hold i ng current - - 15 ma i l latching current - - 30 ma steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characte r istics (t c =2 5 unless other w ise noted) note 1: minimum igt is guaranted at 5% of i g t m a x . 2: for both polarities of a2 referenced to a 1 .
WTPB4A60SW WTPB4A60SW WTPB4A60SW WTPB4A60SW 3 /5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance
WTPB4A60SW WTPB4A60SW WTPB4A60SW WTPB4A60SW 4 /5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance
WTPB4A60SW WTPB4A60SW WTPB4A60SW WTPB4A60SW 5 /5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance t t t t o o o o 220 220 220 220 package package package package dimension dimension dimension dimension unit: unit: unit: unit: mm mm mm mm
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